{"id":10913,"date":"2026-01-14T15:31:49","date_gmt":"2026-01-14T07:31:49","guid":{"rendered":"https:\/\/www.goodworksemi.com\/?p=10913"},"modified":"2026-02-28T11:41:47","modified_gmt":"2026-02-28T03:41:47","slug":"how-to-choose-a-powerhouse-heart-for-power-tools-select-the-right-goodwork-mosfet","status":"publish","type":"post","link":"https:\/\/www.goodworksemi.com\/vi\/how-to-choose-a-powerhouse-heart-for-power-tools-select-the-right-goodwork-mosfet\/","title":{"rendered":"L\u00e0m th\u1ebf n\u00e0o \u0111\u1ec3 ch\u1ecdn m\u1ed9t \u201ctr\u00e1i tim m\u1ea1nh m\u1ebd\u201d cho d\u1ee5ng c\u1ee5 \u0111i\u1ec7n? Ch\u1ecdn \u0111\u00fang MOSFET Goodwork!"},"content":{"rendered":"

Khi th\u1ecb tr\u01b0\u1eddng d\u1ee5ng c\u1ee5 \u0111i\u1ec7n ti\u1ebfp t\u1ee5c ph\u00e1t tri\u1ec3n, ng\u01b0\u1eddi ti\u00eau d\u00f9ng ng\u00e0y c\u00e0ng \u0111\u00f2i h\u1ecfi th\u1eddi l\u01b0\u1ee3ng pin d\u00e0i h\u01a1n, hi\u1ec7u su\u1ea5t cao h\u01a1n v\u00e0 \u0111\u1ed9 tin c\u1eady t\u1ed1t h\u01a1n. T\u1ea5t c\u1ea3 nh\u1eefng y\u1ebfu t\u1ed1 n\u00e0y \u0111\u1ec1u ph\u1ee5 thu\u1ed9c v\u00e0o th\u00e0nh ph\u1ea7n \u0111i\u1ec7n t\u1eed \u201ctr\u00e1i tim\u201d c\u1ee7a d\u1ee5ng c\u1ee5 \u0111i\u1ec7n: MOSFET. M\u1ed9t MOSFET ph\u00f9 h\u1ee3p kh\u00f4ng ch\u1ec9 t\u0103ng c\u01b0\u1eddng c\u00f4ng su\u1ea5t v\u00e0 th\u1eddi gian ho\u1ea1t \u0111\u1ed9ng m\u00e0 c\u00f2n k\u00e9o d\u00e0i tu\u1ed5i th\u1ecd c\u1ee7a d\u1ee5ng c\u1ee5 v\u00e0 gi\u1ea3m t\u1ef7 l\u1ec7 h\u1ecfng h\u00f3c.<\/p>\n

H\u00f4m nay, ch\u00fang t\u00f4i gi\u1edbi thi\u1ec7u m\u1ed9t h\u01b0\u1edbng d\u1eabn chi ti\u1ebft v\u1ec1 vi\u1ec7c l\u1ef1a ch\u1ecdn MOSFET Goodwork cho c\u00e1c \u1ee9ng d\u1ee5ng c\u00f4ng c\u1ee5 \u0111i\u1ec7n\u2014h\u01b0\u1edbng d\u1eabn b\u1ea1n t\u1eebng b\u01b0\u1edbc \u0111\u1ec3 ch\u1ecdn \u0111\u00fang linh ki\u1ec7n!<\/p>\n

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1. MOSFET th\u1ef1c s\u1ef1 l\u00e0m g\u00ec trong c\u00e1c c\u00f4ng c\u1ee5 \u0111i\u1ec7n?<\/b><\/strong><\/p>\n

1.1. H\u1ec7 th\u1ed1ng truy\u1ec1n \u0111\u1ed9ng \u0111\u1ed9ng c\u01a1 (Ch\u1ee9c n\u0103ng ch\u00ednh)<\/p>\n

M\u00f4-t\u01a1 DC ch\u1ed5i than: S\u1eed d\u1ee5ng m\u1ea1ch H-bridge cho ch\u1ebf \u0111\u1ed9 ti\u1ebfn\/l\u00f9i + \u0111i\u1ec1u khi\u1ec3n t\u1ed1c \u0111\u1ed9 PWM ch\u00ednh x\u00e1c, d\u1ec5 d\u00e0ng x\u1eed l\u00fd c\u00e1c t\u00e1c v\u1ee5 \u0111a d\u1ea1ng nh\u01b0 v\u1eb7n \u1ed1c v\u00e0 khoan.<\/p>\n

M\u00f4-t\u01a1 DC kh\u00f4ng ch\u1ed5i than: Trung t\u00e2m c\u1ee7a m\u1ea1ch \u0111i\u1ec1u khi\u1ec3n c\u1ea7u ba pha s\u00e1u transistor, quy\u1ebft \u0111\u1ecbnh t\u1ed1c \u0111\u1ed9 ph\u1ea3n \u1ee9ng c\u00f4ng su\u1ea5t v\u00e0 \u0111\u1ed9 m\u01b0\u1ee3t m\u00e0 trong qu\u00e1 tr\u00ecnh v\u1eadn h\u00e0nh c\u1ee7a c\u00f4ng c\u1ee5.<\/p>\n

Y\u00eau c\u1ea7u c\u01a1 b\u1ea3n: \u0110i\u1ec7n tr\u1edf trong th\u1ea5p (Rds(on)), t\u1ed1c \u0111\u1ed9 chuy\u1ec3n m\u1ea1ch cao, kh\u1ea3 n\u0103ng ch\u1ecbu s\u1ed1c \u0111i\u1ec7n m\u1ea1nh.<\/p>\n

1.2. H\u1ec7 th\u1ed1ng Qu\u1ea3n l\u00fd Pin (BMS, H\u1ec7 th\u1ed1ng B\u1ea3o v\u1ec7 An to\u00e0n)<\/p>\n

B\u1ea3o v\u1ec7 qu\u00e1 \u00e1p\/thi\u1ebfu \u00e1p (ng\u0103n ch\u1eb7n s\u1ea1c qu\u00e1 m\u1ee9c\/x\u1ea3 qu\u00e1 m\u1ee9c) v\u00e0 b\u1ea3o v\u1ec7 qu\u00e1 d\u00f2ng\/ch\u1eadp m\u1ea1ch (ng\u1eaft m\u1ea1ch nhanh ch\u00f3ng trong tr\u01b0\u1eddng h\u1ee3p s\u1ef1 c\u1ed1) t\u1ea1o th\u00e0nh h\u00e0ng r\u00e0o b\u1ea3o v\u1ec7 an to\u00e0n pin \u0111\u1ea7u ti\u00ean.<\/p>\n

Y\u00eau c\u1ea7u c\u01a1 b\u1ea3n: Ti\u00eau th\u1ee5 \u0111i\u1ec7n n\u0103ng t\u0129nh th\u1ea5p, \u0111\u1ed9 tin c\u1eady cao, t\u00ednh nh\u1ea5t qu\u00e1n xu\u1ea5t s\u1eafc.<\/p>\n

1.3. M\u1ea1ch s\u1ea1c (\u0110\u1ea3m b\u1ea3o th\u1eddi gian ho\u1ea1t \u0111\u1ed9ng)<\/p>\n

C\u00f4ng c\u1ee5 c\u1ea7m tay ti\u00eau th\u1ee5 \u00edt n\u0103ng l\u01b0\u1ee3ng: Transistor VDMOS \u0111i\u1ec7n \u00e1p cao l\u00e0 \u0111\u1ee7.<\/p>\n

C\u00f4ng c\u1ee5 c\u00f4ng su\u1ea5t cao: MOSFET si\u00eau ti\u1ebfp \u0111i\u1ec3m (SJ) gi\u00fap gi\u1ea3m \u0111\u00e1ng k\u1ec3 t\u1ed5n th\u1ea5t v\u00e0 n\u00e2ng cao hi\u1ec7u su\u1ea5t s\u1ea1c.<\/p>\n

\u0110\u1ec1 xu\u1ea5t s\u1ea3n ph\u1ea9m Goodwork: C\u00e1c MOSFET thu\u1ed9c d\u00f2ng VDMOS v\u00e0 Cool MOS c\u1ee7a Goodwork gi\u00fap gi\u1ea3m \u0111\u00e1ng k\u1ec3 t\u1ed5n th\u1ea5t d\u1eabn \u0111i\u1ec7n trong m\u1ea1ch s\u1ea1c, t\u1eeb \u0111\u00f3 n\u00e2ng cao hi\u1ec7u su\u1ea5t v\u00e0 k\u00e9o d\u00e0i tu\u1ed5i th\u1ecd pin cho c\u00e1c c\u00f4ng c\u1ee5 \u0111i\u1ec7n.<\/p>\n

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2 Quy tr\u00ecnh l\u1ef1a ch\u1ecdn 4 b\u01b0\u1edbc \u0111\u1ec3 \u0111\u1ea3m b\u1ea3o s\u1ef1 ph\u00f9 h\u1ee3p ch\u00ednh x\u00e1c v\u00e0 tr\u00e1nh c\u00e1c r\u1ee7i ro ti\u1ec1m \u1ea9n<\/b><\/strong><\/p>\n

Vi\u1ec7c l\u1ef1a ch\u1ecdn MOSFET kh\u00f4ng n\u00ean d\u1ef1a v\u00e0o\u76f4\u89c9. N\u1eafm v\u1eefng b\u1ed1n th\u00f4ng s\u1ed1 c\u01a1 b\u1ea3n n\u00e0y \u0111\u1ec3 d\u1ec5 d\u00e0ng gi\u1ea3i quy\u1ebft c\u00e1c th\u00e1ch th\u1ee9c trong vi\u1ec7c l\u1ef1a ch\u1ecdn!<\/p>\n

2.1. Th\u00f4ng s\u1ed1 \u0111i\u1ec7n \u00e1p: An to\u00e0n l\u00e0 tr\u00ean h\u1ebft, \u0111\u1ea3m b\u1ea3o bi\u00ean \u0111\u1ed9 an to\u00e0n \u0111\u1ee7.<\/p>\n

Nguy\u00ean t\u1eafc l\u1ef1a ch\u1ecdn: \u0110i\u1ec7n \u00e1p ph\u00e1 v\u1ee1 (Vds) \u2265 1,5-2 l\u1ea7n \u0111i\u1ec7n \u00e1p ho\u1ea1t \u0111\u1ed9ng.<\/p>\n

V\u00ed d\u1ee5: H\u1ec7 th\u1ed1ng pin 12V \u2192 Ch\u1ecdn c\u00e1c m\u1eabu c\u00f3 \u0111i\u1ec7n \u00e1p \u0111\u1ecbnh m\u1ee9c 30V tr\u1edf l\u00ean.<\/p>\n

Nguy\u00ean l\u00fd ho\u1ea1t \u0111\u1ed9ng: Ch\u1ecbu \u0111\u01b0\u1ee3c \u0111i\u1ec7n \u00e1p ng\u01b0\u1ee3c (back-EMF) v\u00e0 \u0111i\u1ec7n \u00e1p \u0111\u1ed9t bi\u1ebfn trong qu\u00e1 tr\u00ecnh kh\u1edfi \u0111\u1ed9ng\/d\u1eebng \u0111\u1ed9ng c\u01a1 \u0111\u1ec3 ng\u0103n ng\u1eeba h\u1ecfng h\u00f3c thi\u1ebft b\u1ecb.<\/p>\n

2.2. Th\u00f4ng s\u1ed1 hi\u1ec7n t\u1ea1i: N\u1ec1n t\u1ea3ng hi\u1ec7u su\u1ea5t, Xem x\u00e9t d\u00f2ng \u0111i\u1ec7n \u0111\u1ec9nh<\/p>\n

D\u00f2ng \u0111i\u1ec7n \u0111\u1ecbnh m\u1ee9c (ID): \u22655-10 l\u1ea7n d\u00f2ng \u0111i\u1ec7n \u0111\u1ecbnh m\u1ee9c c\u1ee7a \u0111\u1ed9ng c\u01a1.<\/p>\n

D\u00f2ng \u0111i\u1ec7n \u0111\u1ec9nh (IDM): \u22653 l\u1ea7n d\u00f2ng \u0111i\u1ec7n \u0111\u1ecbnh m\u1ee9c c\u1ee7a \u0111\u1ed9ng c\u01a1 (\u0111\u1ec3 x\u1eed l\u00fd c\u00e1c \u0111\u1ec9nh d\u00f2ng kh\u1edfi \u0111\u1ed9ng t\u1ee9c th\u1eddi).<\/p>\n

V\u00ed d\u1ee5 t\u00ednh to\u00e1n: M\u00e1y khoan 12V\/500W \u2192 I = 500W\/12V \u2248 42A \u2192 Ch\u1ecdn d\u00f2ng \u0111i\u1ec7n \u0111\u1ecbnh m\u1ee9c \u2265100A.<\/p>\n

2.3. \u0110i\u1ec7n tr\u1edf khi \u0111\u00f3ng (Rds (on)): Y\u1ebfu t\u1ed1 quy\u1ebft \u0111\u1ecbnh hi\u1ec7u su\u1ea5t, gi\u00e1 tr\u1ecb c\u00e0ng th\u1ea5p c\u00e0ng t\u1ed1t.<\/p>\n

Nguy\u00ean t\u1eafc l\u1ef1a ch\u1ecdn: \u01afu ti\u00ean c\u00e1c m\u00f4 h\u00ecnh c\u00f3 \u0111i\u1ec7n tr\u1edf d\u01b0\u1edbi 10m\u03a9; khuy\u1ebfn ngh\u1ecb d\u01b0\u1edbi 5m\u03a9 cho c\u00e1c c\u00f4ng c\u1ee5 c\u00f4ng su\u1ea5t cao.<\/p>\n

So s\u00e1nh chi ti\u1ebft: M\u1ed9t MOSFET c\u00f3 \u0111i\u1ec7n tr\u1edf 4,5 m\u03a9 so v\u1edbi 10 m\u03a9 gi\u1ea3m ti\u00eau th\u1ee5 c\u00f4ng su\u1ea5t xu\u1ed1ng 55% \u1edf c\u00f9ng m\u1ee9c d\u00f2ng \u0111i\u1ec7n.<\/p>\n

2.4. L\u1ef1a ch\u1ecdn g\u00f3i: C\u00e1c y\u1ebfu t\u1ed1 v\u1ec1 kh\u00f4ng gian v\u00e0 nhi\u1ec7t \u0111\u1ed9<\/p>\n

\u0110\u1ec1 xu\u1ea5t c\u1ee7a Goodwork: Goodwork cung c\u1ea5p nhi\u1ec1u t\u00f9y ch\u1ecdn \u0111\u00f3ng g\u00f3i \u0111a d\u1ea1ng, bao g\u1ed3m TO-252 cho c\u00e1c c\u00f4ng c\u1ee5 nh\u1ecf g\u1ecdn v\u00e0 SOP8, TO-220, TO-247 cho c\u00e1c c\u00f4ng c\u1ee5 t\u1eeb trung b\u00ecnh \u0111\u1ebfn l\u1edbn, \u0111\u1ea3m b\u1ea3o qu\u1ea3n l\u00fd nhi\u1ec7t v\u00e0 \u0111\u1ed9 tin c\u1eady \u1edf c\u00e1c m\u1ee9c c\u00f4ng su\u1ea5t kh\u00e1c nhau.<\/p>\n

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3<\/b><\/strong>. Ti\u00eau ch\u00ed l\u1ef1a ch\u1ecdn cho c\u00e1c lo\u1ea1i d\u1ee5ng c\u1ee5 \u0111i\u1ec7n kh\u00e1c nhau<\/b><\/strong><\/p>\n

L\u1ef1a ch\u1ecdn ch\u00ednh x\u00e1c d\u1ef1a tr\u00ean \u0111i\u1ec1u ki\u1ec7n ho\u1ea1t \u0111\u1ed9ng gi\u00fap t\u1ed1i \u01b0u h\u00f3a hi\u1ec7u su\u1ea5t cho c\u00e1c lo\u1ea1i c\u00f4ng c\u1ee5 \u0111i\u1ec7n kh\u00e1c nhau:<\/p>\n

3.1. M\u00e1y khoan\/Tu\u1ed1c n\u01a1 v\u00edt (Ph\u1ed5 bi\u1ebfn nh\u1ea5t)<\/p>\n

\u0110i\u1ec1u ki\u1ec7n ho\u1ea1t \u0111\u1ed9ng: \u0110i\u1ec7n \u00e1p 12-20V, c\u00f4ng su\u1ea5t 500-1000W, d\u00f2ng \u0111i\u1ec7n \u0111\u1ec9nh 30-50A<\/p>\n

Khuy\u1ebfn ngh\u1ecb: Transistor MOSFET k\u00eanh N, \u0111i\u1ec7n \u00e1p ph\u00e1 v\u1ee1 30-60V, d\u00f2ng \u0111i\u1ec7n \u0111\u1ecbnh m\u1ee9c 60-100A, Rds(on) < 5m\u03a9, v\u1ecf TO-252.<\/p>\n

3.2. M\u00e1y m\u00e0i g\u00f3c\/m\u00e1y c\u1eaft (c\u00f4ng su\u1ea5t cao)<\/p>\n

\u0110i\u1ec1u ki\u1ec7n ho\u1ea1t \u0111\u1ed9ng: D\u00f2ng \u0111i\u1ec7n kh\u1edfi \u0111\u1ed9ng cao, d\u00f2ng \u0111i\u1ec7n cao li\u00ean t\u1ee5c, y\u00eau c\u1ea7u qu\u1ea3n l\u00fd nhi\u1ec7t \u0111\u1ed9 kh\u1eaft khe.<\/p>\n

Khuy\u1ebfn ngh\u1ecb: \u0110i\u1ec7n \u00e1p \u0111\u1ecbnh m\u1ee9c 60V+, d\u00f2ng \u0111i\u1ec7n \u0111\u1ecbnh m\u1ee9c 100A+, Rds(on) < 3m\u03a9, v\u1ecf TO-220\/TO-247 v\u1edbi kh\u1ea3 n\u0103ng t\u1ea3n nhi\u1ec7t \u0111\u01b0\u1ee3c c\u1ea3i thi\u1ec7n.<\/p>\n

3.3. M\u00e1y c\u01b0a\/m\u00e1y \u0111\u1ee5c \u0111i\u1ec7n (T\u1ea3i tr\u1ecdng va \u0111\u1eadp)<\/p>\n

Y\u00eau c\u1ea7u c\u01a1 b\u1ea3n: Kh\u1ea3 n\u0103ng ch\u1ed1ng va \u0111\u1eadp v\u01b0\u1ee3t tr\u1ed9i (UIS) + \u0110i\u1ec7n tr\u1edf Rds(on) th\u1ea5p<\/p>\n

Khuy\u1ebfn ngh\u1ecb: S\u1ea3n ph\u1ea9m d\u00f2ng cao c\u1ea5p UIS chuy\u00ean d\u1ee5ng, d\u1ec5 d\u00e0ng ch\u1ecbu \u0111\u01b0\u1ee3c \u0111i\u1ec1u ki\u1ec7n va \u0111\u1eadp th\u01b0\u1eddng xuy\u00ean.<\/p>\n

3.4. C\u1edd-l\u00ea \u0111i\u1ec7n (M\u00f4-men xo\u1eafn cao)<\/p>\n

\u0110i\u1ec1u ki\u1ec7n ho\u1ea1t \u0111\u1ed9ng: D\u00f2ng \u0111i\u1ec7n cao t\u1ee9c th\u1eddi, ho\u1ea1t \u0111\u1ed9ng c\u01b0\u1eddng \u0111\u1ed9 cao trong th\u1eddi gian ng\u1eafn.<\/p>\n

Khuy\u1ebfn ngh\u1ecb: S\u1eed d\u1ee5ng c\u00e1c m\u00f4 h\u00ecnh c\u00f3 \u0111i\u1ec7n tr\u1edf th\u1ea5p (Rds(on)), m\u1eadt \u0111\u1ed9 d\u00f2ng \u0111i\u1ec7n cao, c\u00e2n b\u1eb1ng gi\u1eefa \u0111\u1ed9 tin c\u1eady v\u00e0 hi\u1ec7u su\u1ea5t \u0111\u1ed9t bi\u1ebfn.<\/p>\n

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4<\/b><\/strong>. H\u01b0\u1edbng d\u1eabn tr\u00e1nh c\u00e1c b\u1eaby trong qu\u00e1 tr\u00ecnh tuy\u1ec3n ch\u1ecdn<\/b><\/strong><\/p>\n

\u2705 H\u00e3y l\u00e0m \u0111i\u1ec1u n\u00e0y:<\/p>\n

\u0110\u1ea3m b\u1ea3o bi\u00ean \u0111\u1ed9 \u0111i\u1ec7n \u00e1p \u0111\u1ee7 l\u1edbn: Duy tr\u00ec m\u1ee9c gi\u1ea3m c\u00f4ng su\u1ea5t tr\u00ean 50%.<\/p>\n

Ki\u1ec3m so\u00e1t s\u1ef1 t\u0103ng nhi\u1ec7t \u0111\u1ed9: Duy tr\u00ec nhi\u1ec7t \u0111\u1ed9 ti\u1ebfp \u0111i\u1ec3m c\u1ee7a MOSFET d\u01b0\u1edbi 125\u00b0C.<\/p>\n

Ph\u00f9 h\u1ee3p c\u00f4ng su\u1ea5t v\u1edbi v\u1ecf m\u00e1y: S\u1eed d\u1ee5ng v\u1ecf m\u00e1y nh\u1ecf cho c\u00f4ng su\u1ea5t th\u1ea5p, t\u0103ng c\u01b0\u1eddng h\u1ec7 th\u1ed1ng l\u00e0m m\u00e1t cho c\u00f4ng su\u1ea5t cao.<\/p>\n

Ki\u1ec3m tra th\u00f4ng qua th\u1eed nghi\u1ec7m: \u0110\u00e1nh gi\u00e1 s\u1ef1 t\u0103ng nhi\u1ec7t \u0111\u1ed9 v\u00e0 d\u1ea1ng s\u00f3ng chuy\u1ec3n m\u1ea1ch trong qu\u00e1 tr\u00ecnh l\u1ea5y m\u1eabu.<\/p>\n

\u274c Tr\u00e1nh nh\u1eefng \u0111i\u1ec1u sau:<\/p>\n

D\u1ef1a v\u00e0o m\u1ee9c \u0111i\u1ec7n \u00e1p v\u1eeba \u0111\u1ee7<\/p>\n

\u01afu ti\u00ean gi\u00e1 c\u1ea3 h\u01a1n Rds(on)<\/p>\n

\u00c9p bu\u1ed9c c\u00e1c g\u00f3i nh\u1ecf v\u00e0o c\u00e1c \u1ee9ng d\u1ee5ng c\u00f4ng su\u1ea5t cao<\/p>\n

B\u1ecf qua t\u00ednh nh\u1ea5t qu\u00e1n c\u1ee7a l\u00f4<\/p>\n

 <\/p>\n

5<\/b><\/strong>.G\u1ee3i \u00fd l\u1ef1a ch\u1ecdn thi\u1ebft b\u1ecb tr\u1ea1ng th\u00e1i r\u1eafn: Hi\u1ec7u qu\u1ea3 & \u0110\u00e1ng tin c\u1eady, Gi\u1ea3i ph\u00e1p to\u00e0n di\u1ec7n<\/b><\/strong><\/p>\n

D\u00f9 l\u00e0 cho h\u1ec7 th\u1ed1ng \u0111i\u1ec1u khi\u1ec3n \u0111\u1ed9ng c\u01a1, b\u1ea3o v\u1ec7 h\u1ec7 th\u1ed1ng qu\u1ea3n l\u00fd pin (BMS) hay m\u1ea1ch s\u1ea1c, d\u00f2ng s\u1ea3n ph\u1ea9m Cool MOS Series + VDMOS Series c\u1ee7a Goodwork \u0111\u1ec1u \u0111\u00e1p \u1ee9ng ch\u00ednh x\u00e1c nhu c\u1ea7u c\u1ee7a b\u1ea1n:<\/p>\n

Thi\u1ebft k\u1ebf Rds(on) th\u1ea5p \u0111\u1ec3 gi\u1ea3m t\u1ed5n th\u1ea5t v\u00e0 t\u0103ng hi\u1ec7u su\u1ea5t;<\/p>\n

G\u00f3i b\u1ea3o hi\u1ec3m to\u00e0n di\u1ec7n cho c\u00e1c k\u00edch th\u01b0\u1edbc c\u00f4ng c\u1ee5 \u0111a d\u1ea1ng;<\/p>\n

l Kh\u1ea3 n\u0103ng ch\u1ed1ng s\u1ed1c m\u1ea1nh m\u1ebd v\u00e0 \u0111\u1ed9 tin c\u1eady cao, \u0111\u1ea3m b\u1ea3o ho\u1ea1t \u0111\u1ed9ng \u1ed5n \u0111\u1ecbnh trong \u0111i\u1ec1u ki\u1ec7n c\u1ef1c \u0111oan.<\/p>\n

Ch\u1ecdn MOSFET c\u1ee7a Goodwork Technology \u0111\u1ec3 mang l\u1ea1i c\u00f4ng su\u1ea5t m\u1ea1nh m\u1ebd h\u01a1n, th\u1eddi gian ho\u1ea1t \u0111\u1ed9ng l\u00e2u h\u01a1n v\u00e0 tu\u1ed5i th\u1ecd k\u00e9o d\u00e0i cho c\u00e1c c\u00f4ng c\u1ee5 \u0111i\u1ec7n c\u1ee7a b\u1ea1n!<\/p>","protected":false},"excerpt":{"rendered":"

Khi th\u1ecb tr\u01b0\u1eddng d\u1ee5ng c\u1ee5 \u0111i\u1ec7n ti\u1ebfp t\u1ee5c ph\u00e1t tri\u1ec3n, ng\u01b0\u1eddi ti\u00eau d\u00f9ng ng\u00e0y c\u00e0ng \u0111\u00f2i h\u1ecfi th\u1eddi l\u01b0\u1ee3ng pin d\u00e0i h\u01a1n, hi\u1ec7u su\u1ea5t cao h\u01a1n v\u00e0 \u0111\u1ed9 tin c\u1eady t\u1ed1t h\u01a1n. T\u1ea5t c\u1ea3 nh\u1eefng y\u1ebfu t\u1ed1 n\u00e0y \u0111\u1ec1u ph\u1ee5 thu\u1ed9c v\u00e0o...<\/p>","protected":false},"author":2,"featured_media":10914,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[1],"tags":[],"class_list":["post-10913","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-news"],"acf":[],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/www.goodworksemi.com\/vi\/wp-json\/wp\/v2\/posts\/10913","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.goodworksemi.com\/vi\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.goodworksemi.com\/vi\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.goodworksemi.com\/vi\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.goodworksemi.com\/vi\/wp-json\/wp\/v2\/comments?post=10913"}],"version-history":[{"count":0,"href":"https:\/\/www.goodworksemi.com\/vi\/wp-json\/wp\/v2\/posts\/10913\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.goodworksemi.com\/vi\/wp-json\/wp\/v2\/media\/10914"}],"wp:attachment":[{"href":"https:\/\/www.goodworksemi.com\/vi\/wp-json\/wp\/v2\/media?parent=10913"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.goodworksemi.com\/vi\/wp-json\/wp\/v2\/categories?post=10913"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.goodworksemi.com\/vi\/wp-json\/wp\/v2\/tags?post=10913"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}